POM molecules- the future of flash memory?
A new molecule may be the answer to the limited capacity of Flash systems. Components MOS (metal-oxide-semiconductor), which are used in the process of Flash memory making, are physically limited by the size of memory cells. It is very hard to decrease their size below 10 nanometres, what it turn limits the number of cells which can be placed on a traditional silicone system.
For some time past, researchers have been investigating molecules that could replace conventional solutions. This a very difficult process as many candidates are sensitive to changes in temperature and their resistance is too high.
The researchers at Glasgow University and Spanish Universidad Rovira and Virgili , may have found a solution to this problem. They made use of POM molecules (polyoxometalate). Traditional Flash Systems use transistors. After the electricity supply is cut off, they remember whether they were in ‘on’ or ‘off’ mode. We managed to design, synthesize and describe POM molecules, which are capable of trapping and storing charge, acting as a type Flash memory RAM and at the same time are capable of enriching its core with selenium. In this way we created a type of memory we call “write-once-erase” – says professor Lee Cronin, Glasgow.
POM clusters ensure stability, electronic activity and their electronic features can be tuned, what makes them useful in the process of manufacturing memory systems. One of their main advantages is the fact that they can be made with tools already existent in industry, therefore clusters POM can be manufactured without extra investment in new production lines.